Binding Energy Of A Donor In A Spherical Quantum Dot , GaAs
نویسندگان
چکیده
منابع مشابه
Binding energy of an off-center shallow donor D− in a spherical quantum dot
The binding energy of a negatively charged hydrogenic impurity with onand offcenter position in a spherical Gaussian quantum dot was calculated with the configuraction interaction method. Our calculations show that Eb is always positive for on-center impurities with a maximum near to the radius for one-electron stability of the potential well Rc. For off-center positions the binding energy can ...
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In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...
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In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...
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The combined effect of hydrostatic pressure and temperature on correlation energy in a triplet state of two electron spherical quantum dot with square well potential is computed. The result is presented taking GaAs dot as an example. Our result shows the correlation energies are i)negative in the triplet state contrast to the singlet state ii) it increases with increase in pressure iii)further...
متن کاملTheoretical Investigation/Research On Binding Energy Of A Donor In A Spherical Quantum Dot At Various Locations On It
The binding energy of a donor in spherical quantum dots (QDs) is calculated, using a variational approach within the effective mass approximation. The binding energy is computed for GaAs QD as a function of the dot size for different impurity positions, and also as a function of the impurity position for different dot sizes. The results of mine show that when the impurity binding energy increas...
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ژورنال
عنوان ژورنال: IOSR Journal of Applied Physics
سال: 2013
ISSN: 2278-4861
DOI: 10.9790/4861-0320105